CPV362M4F
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 8.8A 23W IMS-2
$0.00
Available to order
Reference Price (USD)
160+
$33.35000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CPV362M4F IGBT Module from Vishay General Semiconductor - Diodes Division delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Vishay General Semiconductor - Diodes Division for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8.8 A
- Power - Max: 23 W
- Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 340 pF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
Related Products
Infineon Technologies
FS75R12KT4B11BOSA1
Vishay General Semiconductor - Diodes Division
VS-GA200SA60SP
Infineon Technologies
FF1200R12KE3NOSA1
Powerex Inc.
CM1000DU-34NF
Vishay General Semiconductor - Diodes Division
VS-GP250SA60S
Littelfuse Inc.
MG12100W-XN2MM
Littelfuse Inc.
MG12100D-BA1MM
Infineon Technologies
FP25R12KT4BOSA1
Powerex Inc.
CM450DX-24S1
onsemi