IXTA130N10T
IXYS
IXYS
MOSFET N-CH 100V 130A TO263
$4.66
Available to order
Reference Price (USD)
1+
$2.98000
50+
$2.40000
100+
$2.16000
500+
$1.68000
1,000+
$1.39200
2,500+
$1.34400
Exquisite packaging
Discount
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Optimize your electronic systems with IXTA130N10T, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXTA130N10T provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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