C3M0120065J
Wolfspeed, Inc.
Wolfspeed, Inc.
650V 120M SIC MOSFET
$8.47
Available to order
Reference Price (USD)
1+
$8.47000
500+
$8.3853
1000+
$8.3006
1500+
$8.2159
2000+
$8.1312
2500+
$8.0465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with C3M0120065J, a high-quality Transistors - FETs, MOSFETs - Single from Wolfspeed, Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, C3M0120065J provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Rohm Semiconductor
RSR030N06TL
onsemi
NTNS3164NZT5G
Diodes Incorporated
DMG1012UW-7
IXYS
IXFX80N50P
IXYS
IXTP16N50P
Toshiba Semiconductor and Storage
TK17E65W,S1X
Vishay Siliconix
SI7114DN-T1-E3
onsemi
FCD850N80Z
Vishay Siliconix
SI4850EY-T1-E3
STMicroelectronics