IPI90R340C3XKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 15A TO262-3
$4.60
Available to order
Reference Price (USD)
1+
$4.59680
500+
$4.550832
1000+
$4.504864
1500+
$4.458896
2000+
$4.412928
2500+
$4.36696
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPI90R340C3XKSA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPI90R340C3XKSA2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXFH32N100X
Toshiba Semiconductor and Storage
TK20N60W5,S1VF
Vishay Siliconix
SQD40052EL_GE3
Vishay Siliconix
SIHF22N60E-GE3
Diodes Incorporated
DMG3414U-7
Vishay Siliconix
SUP70101EL-GE3
Infineon Technologies
IRFZ34NPBF
Infineon Technologies
IRFR5410TRLPBF
Micro Commercial Co
SI3415-TP
Renesas Electronics America Inc