BUK7Y07-30B,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 75A LFPAK56
$1.02
Available to order
Reference Price (USD)
1,500+
$0.43331
3,000+
$0.39269
7,500+
$0.36561
10,500+
$0.35207
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BUK7Y07-30B,115 by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BUK7Y07-30B,115 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1773 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 105W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Vishay Siliconix
SIHG21N80AE-GE3
Infineon Technologies
IPN80R4K5P7ATMA1
Infineon Technologies
IRF6648TRPBF
Rectron USA
RM052N100DF
Micro Commercial Co
MCG20P03-TP
Infineon Technologies
IRF3610STRLPBF
Infineon Technologies
BSC252N10NSFGATMA1
Rohm Semiconductor
RF4E110BNTR
STMicroelectronics
STL18N65M2
Toshiba Semiconductor and Storage