IPN80R4K5P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 1.5A SOT223
$0.95
Available to order
Reference Price (USD)
3,000+
$0.29613
6,000+
$0.27788
15,000+
$0.26876
30,000+
$0.26378
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPN80R4K5P7ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPN80R4K5P7ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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