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FQP13N10

onsemi
FQP13N10 Preview
onsemi
MOSFET N-CH 100V 12.8A TO220-3
$1.65
Available to order
Reference Price (USD)
1+
$1.14000
10+
$1.00900
100+
$0.79770
500+
$0.61864
1,000+
$0.48840
Exquisite packaging
Discount
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Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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