BUK763R1-60E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
$3.15
Available to order
Reference Price (USD)
800+
$1.24754
1,600+
$1.14489
2,400+
$1.06593
5,600+
$1.02645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BUK763R1-60E,118 by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BUK763R1-60E,118 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AOW7S60
STMicroelectronics
STD9N60M2
Diotec Semiconductor
DI040N03PT-AQ
IXYS Integrated Circuits Division
CPC3909ZTR
IXYS
IXFH70N20Q3
Microchip Technology
APT25M100J
Panjit International Inc.
PJQ4404P_R2_00001
Vishay Siliconix
IRL540STRLPBF
Microchip Technology
MSC100SM70JCU2
Nexperia USA Inc.