IXFH70N20Q3
IXYS
IXYS
MOSFET N-CH 200V 70A TO247AD
$13.29
Available to order
Reference Price (USD)
1+
$10.33000
30+
$8.46667
120+
$7.64050
510+
$6.40151
1,020+
$5.78200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFH70N20Q3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFH70N20Q3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Microchip Technology
APT25M100J
Panjit International Inc.
PJQ4404P_R2_00001
Vishay Siliconix
IRL540STRLPBF
Microchip Technology
MSC100SM70JCU2
Nexperia USA Inc.
BUK9606-75B,118
onsemi
FCP20N60
Vishay Siliconix
SIHH26N60EF-T1-GE3
Taiwan Semiconductor Corporation
TSM042N03CS RLG
STMicroelectronics
STP12NK30Z
IXYS