BUK7526-100B,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 49A TO220AB
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with BUK7526-100B,127, a reliable Transistors - FETs, MOSFETs - Single by NXP USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BUK7526-100B,127 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2891 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IMZA65R048M1HXKSA1
Fairchild Semiconductor
HUF75321S3S
onsemi
NVMJS1D5N04CLTWG
Nexperia USA Inc.
PSMN2R8-25MLC,115
Vishay Siliconix
SIHP14N60E-GE3
Rohm Semiconductor
RQ6E030ATTCR
Fairchild Semiconductor
FQPF13N06
Toshiba Semiconductor and Storage
TK35A65W,S5X
STMicroelectronics
STP4NK60Z
Vishay Siliconix