BSZ180P03NS3EGATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 9A/39.5A TSDSON
$0.94
Available to order
Reference Price (USD)
5,000+
$0.25616
10,000+
$0.24668
25,000+
$0.24150
Exquisite packaging
Discount
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Enhance your circuit performance with BSZ180P03NS3EGATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BSZ180P03NS3EGATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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