IXFN210N20P
IXYS
IXYS
MOSFET N-CH 200V 188A SOT-227B
$45.94
Available to order
Reference Price (USD)
1+
$34.80000
10+
$32.19000
30+
$29.58000
100+
$27.49200
250+
$25.23000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFN210N20P, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFN210N20P is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1070W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
IPP70N10SL16AKSA1
onsemi
FDS8813NZ
Infineon Technologies
IPD60R180P7SE8228AUMA1
IXYS
IXFH18N100Q3
Panjit International Inc.
PJD9P06A-AU_L2_000A1
Fairchild Semiconductor
FDPF7N50
Fairchild Semiconductor
FDB7030BL
STMicroelectronics
STB45N40DM2AG
onsemi
FDP075N15A-F102
Vishay Siliconix