BSS214NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 1.5A SOT23-3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.10468
6,000+
$0.09505
15,000+
$0.08541
30,000+
$0.08059
75,000+
$0.07240
150,000+
$0.06999
Exquisite packaging
Discount
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Infineon Technologies presents BSS214NH6327XTSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSS214NH6327XTSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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