BSS123LT1G
onsemi
onsemi
MOSFET N-CH 100V 170MA SOT23-3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.05266
6,000+
$0.04603
15,000+
$0.03940
30,000+
$0.03719
75,000+
$0.03497
150,000+
$0.03055
Exquisite packaging
Discount
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Discover BSS123LT1G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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