BSS169 E6327
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
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Optimize your electronic systems with BSS169 E6327, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSS169 E6327 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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