TPN2R503NC,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 30V 40A 8TSON-ADV
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Reference Price (USD)
5,000+
$0.54600
Exquisite packaging
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Toshiba Semiconductor and Storage presents TPN2R503NC,L1Q, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TPN2R503NC,L1Q delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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