BSP92PL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 250V 260MA SOT223-4
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSP92PL6327HTSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSP92PL6327HTSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4-21
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
AUIRF7769L2TR
Fairchild Semiconductor
HUFA75321D3ST
STMicroelectronics
STL4P3LLH6
onsemi
NTD4854N-35G
Goford Semiconductor
G65P06F
Infineon Technologies
AUIRFS8408-7TRL
Vishay Siliconix
IRF9Z10PBF-BE3
Toshiba Semiconductor and Storage
TK380A60Y,S4X
STMicroelectronics
STI10N62K3
Infineon Technologies