HUF75631SK8
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with HUF75631SK8 by Fairchild Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, HUF75631SK8 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FDC602P
IXYS
IXTN550N055T2
Infineon Technologies
IPB083N10N3GATMA1
Toshiba Semiconductor and Storage
SSM3J09FU,LF
Micro Commercial Co
MCQ05P10Y-TP
onsemi
FCHD040N65S3-F155
Vishay Siliconix
SIR638ADP-T1-RE3
Rohm Semiconductor
RSR015P03TL
onsemi
FDY301NZ
Vishay Siliconix