BSP135H6433XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223
$1.74
Available to order
Reference Price (USD)
4,000+
$0.55594
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSP135H6433XTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSP135H6433XTMA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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