STB36N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 30A D2PAK
$6.32
Available to order
Reference Price (USD)
1+
$6.32000
500+
$6.2568
1000+
$6.1936
1500+
$6.1304
2000+
$6.0672
2500+
$6.004
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STB36N60M6, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STB36N60M6 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXFA26N30X3
Wolfspeed, Inc.
C3M0021120K
Nexperia USA Inc.
PSMN013-100PS,127
IXYS
IXFA130N15X3TRL
IXYS
IXTA160N10T7
Nexperia USA Inc.
BUK9608-55B,118
Vishay Siliconix
SIHB120N60E-T1-GE3
Infineon Technologies
IPD50N06S214ATMA2
Fairchild Semiconductor
FCU5N60TU
Diodes Incorporated