BSO200P03SHXUMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 7.4A 8DSO
$0.70
Available to order
Reference Price (USD)
2,500+
$0.42350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BSO200P03SHXUMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSO200P03SHXUMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Nexperia USA Inc.
PSMN3R3-80BS,118
Vishay Siliconix
SQJA94EP-T1_GE3
Infineon Technologies
IRFR4105TRPBF
onsemi
NTP5D0N15MC
Renesas Electronics America Inc
H7N1004FN-E
Microchip Technology
APT94N60L2C3G
Rohm Semiconductor
R6524KNJTL
Alpha & Omega Semiconductor Inc.
AON6590A
Rohm Semiconductor
RSQ035N06HZGTR
Vishay Siliconix