DMN3061SW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT323 T&R
$0.07
Available to order
Reference Price (USD)
1+
$0.06618
500+
$0.0655182
1000+
$0.0648564
1500+
$0.0641946
2000+
$0.0635328
2500+
$0.062871
Exquisite packaging
Discount
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Experience the power of DMN3061SW-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN3061SW-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 490mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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