BSM150GB120DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 210A 1250W
$267.92
Available to order
Reference Price (USD)
10+
$150.87800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your power electronics with BSM150GB120DN2HOSA1 IGBT Modules by Infineon Technologies. Known for their durability and precision, these modules are perfect for applications like electric vehicles, welding equipment, and UPS systems. Features include low saturation voltage and high current capacity. Get the best in semiconductor solutions reach out for pricing and availability.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 210 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
- Current - Collector Cutoff (Max): 2.8 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP15R06YE3B4BOMA1
onsemi
NXH100B120H3Q0STG
Infineon Technologies
FB20R06W1E3B11BPSA1
Infineon Technologies
F4250R17MP4B11BPSA2
Microchip Technology
APTGT30TL601G
Infineon Technologies
BSM400GA120DN2HOSA1
IXYS
MII75-12A3
Infineon Technologies
BSM10GD120DN2BOSA1
Fairchild Semiconductor
FMM7G20US60N
Microchip Technology