MII75-12A3
IXYS
IXYS
IGBT MODULE 1200V 90A 370W Y4M5
$63.62
Available to order
Reference Price (USD)
6+
$56.89833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS's MII75-12A3 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust IXYS for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 370 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
Related Products
Infineon Technologies
BSM10GD120DN2BOSA1
Fairchild Semiconductor
FMM7G20US60N
Microchip Technology
APTGT100H170G
Microchip Technology
APTGT75X60T3G
Infineon Technologies
BSM15GD120DLCE3224BOSA1
IXYS
IXA60IF1200NA
Infineon Technologies
FD200R65KF2-K
Infineon Technologies
FF450R33T3E3B5P6BPMA1
Vishay General Semiconductor - Diodes Division
VS-ETY020P120F
Microchip Technology