BSC080P03LSGAUMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 16A/30A TDSON-8
$2.81
Available to order
Reference Price (USD)
5,000+
$0.92507
10,000+
$0.90566
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC080P03LSGAUMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC080P03LSGAUMA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-3
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPD65R660CFDATMA1
Nexperia USA Inc.
PSMN6R0-30YL,115
Fairchild Semiconductor
FDU8874
Toshiba Semiconductor and Storage
TK20V60W5,LVQ
onsemi
NTD4809NAT4G
Alpha & Omega Semiconductor Inc.
AOB14N50
STMicroelectronics
STD7N52K3
Diodes Incorporated
DMP6023LSS-13
Fairchild Semiconductor
FDA62N28
Fairchild Semiconductor