APT34N80B2C3G
Microchip Technology
Microchip Technology
MOSFET N-CH 800V 34A T-MAX
$11.17
Available to order
Reference Price (USD)
1+
$11.42000
10+
$10.38400
100+
$8.82610
500+
$7.52812
1,000+
$7.26852
Exquisite packaging
Discount
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APT34N80B2C3G by Microchip Technology is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, APT34N80B2C3G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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