BSC059N04LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 16A/73A TDSON
$1.19
Available to order
Reference Price (USD)
5,000+
$0.38743
10,000+
$0.37471
25,000+
$0.36777
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC059N04LSGATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC059N04LSGATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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