BUK664R6-40C,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A D2PAK
$0.41
Available to order
Reference Price (USD)
1+
$1.79000
10+
$1.61900
100+
$1.30120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BUK664R6-40C,118 from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BUK664R6-40C,118 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
PSMN012-100YS,115
Renesas Electronics America Inc
2SJ387STL-E
Infineon Technologies
IPW60R099CPAFKSA1
Infineon Technologies
IPD60R1K5CEAUMA1
Fairchild Semiconductor
FDH5500
PN Junction Semiconductor
P3M171K0G7
onsemi
FDD3682
Texas Instruments
CSD17575Q3T
onsemi
NTB6412ANT4G
onsemi