BLS7G2933S-150,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, S BAND, SILI
$515.33
Available to order
Reference Price (USD)
20+
$339.08550
Exquisite packaging
Discount
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The BLS7G2933S-150,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 2.9GHz ~ 3.3GHz
- Gain: 13.5dB
- Voltage - Test: 32 V
- Current Rating (Amps): 4.2µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 150W
- Voltage - Rated: 60 V
- Package / Case: SOT-922-1
- Supplier Device Package: CDFM2
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