AFV09P350-04GNR3
Freescale Semiconductor
Freescale Semiconductor
RF POWER FIELD-EFFECT TRANSISTOR
$233.10
Available to order
Reference Price (USD)
250+
$199.30544
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The AFV09P350-04GNR3 by Freescale Semiconductor redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 920MHz
- Gain: 19.5dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 860 mA
- Power - Output: 100W
- Voltage - Rated: 105 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
Related Products
onsemi
STMFS4834NST1G
NXP USA Inc.
BLF2425M7LS140,112
Freescale Semiconductor
MRF6S19200HR5
onsemi
2SK2437-TD-E
NXP USA Inc.
A3T18H455W23SR6
Freescale Semiconductor
MRF8P20100HSR3
Freescale Semiconductor
AFT26H250W03SR6
STMicroelectronics
SD2931-15W
onsemi
2SK2406-TL-E
Ampleon USA Inc.