BLF7G22LS-250P,112
NXP USA Inc.
NXP USA Inc.
N-CHANNEL, MOSFET
$133.68
Available to order
Reference Price (USD)
60+
$130.25067
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF7G22LS-250P,112 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 2.8µA
- Noise Figure: -
- Current - Test: 1.9 A
- Power - Output: 250W
- Voltage - Rated: 65 V
- Package / Case: SOT-539B
- Supplier Device Package: SOT539B
Related Products
Ampleon USA Inc.
BLS9G3135LS-115U
Ampleon USA Inc.
BLU9H0408L-800PU
Wolfspeed, Inc.
CG2H80120D-GP4
Ampleon USA Inc.
BLF8G27LS-140,118
Ampleon USA Inc.
BLA9G1011L-300U
Microchip Technology
ARF463BG
Ampleon USA Inc.
BLP8G21S-160PVY
Ampleon USA Inc.
BLF8G10LS-300PU
STMicroelectronics
PD54003-E
NXP USA Inc.