BF1201WR,135
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BF1201WR,135 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 29dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 10 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
Related Products
Ampleon USA Inc.
BLL6H1214LS-250,11
onsemi
CPH5846-TL-E
Ampleon USA Inc.
BLF8G10LS-300PJ
Wolfspeed, Inc.
CGH60120D-GP4
Wolfspeed, Inc.
GTRA362002FC-V1-R0
Wolfspeed, Inc.
PTVA042502FC-V1-R0
NXP USA Inc.
BF904A,215
Ampleon USA Inc.
BLF8G20LS-400PVU
NXP USA Inc.
BF861C,215
Wolfspeed, Inc.