BFP193WE6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT343-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BFP193WE6327HTSA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 13.5dB ~ 20.5dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
Related Products
Microsemi Corporation
2N4957
Broadcom Limited
AT-32032-TR1
CEL
NE68039-A
NXP USA Inc.
BFG540W/X,115
Central Semiconductor Corp
2N3866 TIN/LEAD
Infineon Technologies
BFR 949L3 E6327
NXP USA Inc.
BFG35,115
Infineon Technologies
BFP540E6327BTSA1
Microsemi Corporation
MRF4427GR1
Broadcom Limited