2N4957
Microsemi Corporation
Microsemi Corporation
RF TRANS PNP 30V 30MA TO72
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Upgrade your RF designs with Microsemi Corporation's 2N4957 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how 2N4957 can enhance your projects!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
- Gain: 25dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-72-3 Metal Can
- Supplier Device Package: TO-72
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