BF1212WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
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Discover high-performance BF1212WR,115 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 30dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 0.9dB
- Current - Test: 12 mA
- Power - Output: -
- Voltage - Rated: 6 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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