A2I25H060GNR1
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
500+
$54.64544
Exquisite packaging
Discount
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Meet NXP USA Inc.'s A2I25H060GNR1, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.59GHz
- Gain: 26.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 26 mA
- Power - Output: 10.5W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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