BCR183WE6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
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The BCR183WE6327 from Infineon Technologies is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Infineon Technologies for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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