BCR133WE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
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Choose the BCR133WE6327HTSA1 from Infineon Technologies for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Infineon Technologies is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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