APTGT75DA170D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 120A 520W D1
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Microsemi Corporation's APTGT75DA170D1G IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Microsemi Corporation for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 120 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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