APTGT75DA120T1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 110A 357W SP1
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Microsemi Corporation's APTGT75DA120T1G IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 357 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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