APTGFQ25H120T2G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 227W SP2
$0.00
Available to order
Reference Price (USD)
1+
$59.44000
10+
$55.94500
25+
$52.44840
Exquisite packaging
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Microsemi Corporation's APTGFQ25H120T2G IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Microsemi Corporation for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: NPT and Fieldstop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 227 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.02 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: SP2
- Supplier Device Package: SP2
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