APTGT100A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 150A 520W D1
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The APTGT100A120D1G from Microsemi Corporation sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Microsemi Corporation for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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