APTGF50DH120TG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 312W SP4
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Microsemi Corporation's APTGF50DH120TG IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 312 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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