IPB50R140CPATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 550V 23A TO263-3
$4.10
Available to order
Reference Price (USD)
1,000+
$2.47709
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPB50R140CPATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 930µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPP80R600P7XKSA1
Vishay Siliconix
SIHA12N50E-E3
onsemi
NVMFS5C430NWFAFT1G
Vishay Siliconix
SIHFR9024TR-GE3
Vishay Siliconix
IRFR420TRRPBF
STMicroelectronics
STP220N6F7
Infineon Technologies
IPU95R3K7P7AKMA1
Fairchild Semiconductor
HUFA75623S3ST
Toshiba Semiconductor and Storage
TK14E65W5,S1X
Vishay Siliconix