APT25GR120BSCD10
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 75A 521W TO247
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The APT25GR120BSCD10 Single IGBT from Microsemi Corporation redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Microsemi Corporation stands behind every APT25GR120BSCD10 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
- Power - Max: 521 W
- Switching Energy: 434µJ (on), 466µJ (off)
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 16ns/122ns
- Test Condition: 600V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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