APT10090SLLG
Microchip Technology
Microchip Technology
MOSFET N-CH 1000V 12A D3PAK
$18.55
Available to order
Reference Price (USD)
1+
$18.54600
500+
$18.36054
1000+
$18.17508
1500+
$17.98962
2000+
$17.80416
2500+
$17.6187
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of APT10090SLLG, a premium Transistors - FETs, MOSFETs - Single from Microchip Technology. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, APT10090SLLG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3 [S]
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Infineon Technologies
BSZ065N06LS5ATMA1
Infineon Technologies
AUIRL2203N
Infineon Technologies
IPD60R2K0PFD7SAUMA1
Diodes Incorporated
DMNH6008SCTQ
Rectron USA
RM6N100S4
Infineon Technologies
IPD65R600E6ATMA1
Diodes Incorporated
DMN3150LW-7
Infineon Technologies
BSZ160N10NS3GATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ1216A-F1-1100HF
Renesas Electronics America Inc