DMNH6008SCTQ
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 130A TO220AB
$2.04
Available to order
Reference Price (USD)
1+
$2.17000
50+
$1.77000
100+
$1.60500
500+
$1.27500
1,000+
$1.07700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMNH6008SCTQ by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMNH6008SCTQ ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rectron USA
RM6N100S4
Infineon Technologies
IPD65R600E6ATMA1
Diodes Incorporated
DMN3150LW-7
Infineon Technologies
BSZ160N10NS3GATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ1216A-F1-1100HF
Renesas Electronics America Inc
UPA2731T1A-E1-AZ
Fairchild Semiconductor
HUF75339G3
Infineon Technologies
AUIRF6215S
STMicroelectronics
STP3NK60Z
Diodes Incorporated