AOB282L
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 18.5A/105A TO263
$2.52
Available to order
Reference Price (USD)
800+
$2.00900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Alpha & Omega Semiconductor Inc. presents AOB282L, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, AOB282L delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPB240N04S4R9ATMA1
NXP USA Inc.
BUK9C10-55BIT/A,11
Infineon Technologies
IPA90R800C3XKSA2
Rohm Semiconductor
RF4E070BNTR
Vishay Siliconix
IRF730STRRPBF
Infineon Technologies
IRF3709PBF
Infineon Technologies
AUIRFS3207ZTRL
Harris Corporation
2N6792TX
Vishay Siliconix
SIHP33N60E-GE3
Fairchild Semiconductor