IPA90R800C3XKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 6.9A TO220
$2.01
Available to order
Reference Price (USD)
1+
$2.01390
500+
$1.993761
1000+
$1.973622
1500+
$1.953483
2000+
$1.933344
2500+
$1.913205
Exquisite packaging
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Discover IPA90R800C3XKSA2, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 460µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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