AIMW120R060M1HXKSA1
Infineon Technologies
Infineon Technologies
1200V COOLSIC MOSFET PG-TO247-3
$18.09
Available to order
Reference Price (USD)
1+
$18.09000
500+
$17.9091
1000+
$17.7282
1500+
$17.5473
2000+
$17.3664
2500+
$17.1855
Exquisite packaging
Discount
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Experience the power of AIMW120R060M1HXKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, AIMW120R060M1HXKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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